Mg-Doping-Concentration Dependence for Ni/p-GaN Schottky Contacts
نویسندگان
چکیده
منابع مشابه
Thermally stable Schottky contacts on n-type GaN using ZrB2
The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C...
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ژورنال
عنوان ژورنال: Journal of the Society of Materials Science, Japan
سال: 2020
ISSN: 0514-5163,1880-7488
DOI: 10.2472/jsms.69.717