Mg-Doping-Concentration Dependence for Ni/p-GaN Schottky Contacts

نویسندگان

چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Thermally stable Schottky contacts on n-type GaN using ZrB2

The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C...

متن کامل

Thermal admittance spectroscopy of Mg-doped GaN Schottky diodes

Thermal admittance spectroscopy measurements at temperatures ranging from room temperature to 90 K are performed on Schottky structures based on Mg-doped GaN layers grown by metalorganic vapor phase epitaxy on sapphire. The analysis of the experimental data is made by a detailed theoretical study of the steady-state and small-signal electrical characteristics of the structures. Numerical simula...

متن کامل

The effect of Mg doping on GaN nanowires

We present a comparison between the structural, chemical, and electrical properties of Mg-doped GaN nanowires grown by hot-wall chemical vapor deposition using two different Mg sources, namely, metaloorganic bis(methylcyclopentadienyl) magnesium and magnesium nitride powder. We find that Mg from the solid nitride source is more effectively incorporated into the nanowires while better maintainin...

متن کامل

Tuning from thermionic emission to ohmic tunnel contacts via doping in Schottky-barrier nanotube transistors.

Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The ...

متن کامل

Mg–Ga liquid metal ion source for implantation doping of GaN

A magnesium liquid metal ion source was investigated for p-type doping of GaN. The metal is an alloy composed of 33.3% Mg and 66.7% Ga. The source type is a direct heating needle source with a spring-type reservoir, which is constructed using tungsten wire and a ceramic tube. The source has been tested and characterized in a NanoFab 150 focused ion beam ~FIB! system. A typical source lifetime w...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of the Society of Materials Science, Japan

سال: 2020

ISSN: 0514-5163,1880-7488

DOI: 10.2472/jsms.69.717